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Cluster System for Graphene Synthesis

PECVD-PVD Cluster System For Graphene Synthesis

This System is PECVD-PVD Cluster System for Graphene Synthesis and it used for.

Feature of Graphene Synthesis

  • Multi-functional cluster system combined with PECVD, sputter and E-beam evaporation for high quality graphene synthesis
  • Maximum substrate heater temperature: 1,000℃ for PECVD, 800℃ for Sputter and 500℃ for e-beam evaporation, respectively
  • Automatic loading transfer chamber around which PECVD, Sputter and E-beam evaporation chambers are attached
  • PC controled system : recipe save, open function, and fully automation except for e-beam evaporation module
  • Wafer capacity: 8" x1
  • Average throughput: 2,000 wafer/year
Cluster System for Graphene Synthesis
Cluster System for Graphene Synthesis
Cluster System for Graphene Synthesis
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