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Auto Strain Mapping

Novel Automated Strain Mapping Solution for TEM/STEM (Patent pending) based on nanobeam precession diffraction patterrns in combination with DigiSTAR. Precision up 0.02% (200kV FEG) with spatial resolution up to 2nm attainable (FEG-TEM). Measurement of strain with high spatial resolution and high precision in semiconductor devices is critical to monitor the designed and unintended strain distributions.

Auto Strain Mapping Specification

High spatial resolution, high precision strain mapping in modern semiconductor devices.
Acquisition of STEM reference image.
Ultra -fast nanobeam precession electron diffraction scanned acquisition.
Typical acquisition time: 5-10 mm (150x150)

Time per pixel: 10-40 ms Analysis time 5-10 min.
Automated local strain analysis via AppFive proprietary algorithm.
Acquisition from individual positions, line profiles, areas Spatial resolution < 2 nm attainable (FED TEM)