PECVD system TI-O1200-P80V10
Preparation of nano materials, Various CVD experiment,Thin film growth of SiNx and SiO2,Passivation of semiconductor devices and integrated circuits
Preparation of nano materials, Various CVD experiment,Thin film growth of SiNx and SiO2,Passivation of semiconductor devices and integrated circuits
| Product Name | PECVD system | Chamber Length | 440mm |
|---|---|---|---|
| Product Model | TI-O1200-P80V10 | Tube Diameter | 80mm |
| Using Temperature | ≦1100OC | Tube Length | 1400mm |
| Temperature Accuracy | ±1 OC | Total Power | 5KW |
| Temperature Control | Intelligent PID | Power Supply | 220V 50/60Hz |
| Pre-storing Curve | Multi curves | Plasma RF generator | 500W |
