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Nanowire Synthesis

Thermal Cvd System For Nanowire Synthesis

This Thermal CVD System for Nanowire Synthesis and used for nanowires (Si & doped Si), nanotubes.

Feature of Nanowire Synthesis

  • Multi-functional thermal CVD system for nanowire synthesis
  • Combined with plasma treatment and probe station
  • Maximum substrate temperature: 900℃
  • Growth direction controllable
  • Automatic loading available during subsceptor heating
  • High density plasma source for chamber cleaning
  • PC-based control system
  • Average throughput 4,800 wafer / year
Nanowire Synthesis
Nanowire Synthesis
Nanowire Synthesis
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