Auto Strain Mapping
Novel Automated Strain Mapping Solution for TEM/STEM (Patent pending) based on nanobeam precession diffraction patterrns in combination with DigiSTAR. Precision up 0.02% (200kV FEG) with spatial resolution up to 2nm attainable (FEG-TEM). Measurement of strain with high spatial resolution and high precision in semiconductor devices is critical to monitor the designed and unintended strain distributions.
Auto Strain Mapping Specification
- High spatial resolution, high precision strain mapping in modern semiconductor devices.
- Acquisition of STEM reference image
- Ultra -fast nanobeam precession electron diffraction scanned acquisition.
- Typical acquisition time: 5-10 mm (150x150)
- Time per pixel: 10-40 ms Analysis time 5-10 min.
- Automated local strain analysis via AppFive proprietary algorithm.
- Acquisition from individual positions, line profiles, areas Spatial resolution < 2 nm attainable (FED TEM)
