Auto Strain Mapping
Novel Automated Strain Mapping Solution for TEM/STEM (Patent pending) based on nanobeam precession diffraction patterrns in combination with DigiSTAR. Precision up 0.02% (200kV FEG) with spatial resolution up to 2nm attainable (FEG-TEM). Measurement of strain with high spatial resolution and high precision in semiconductor devices is critical to monitor the designed and unintended strain distributions.
Auto Strain Mapping Specification
- High spatial resolution, high precision strain mapping in modern semiconductor devices.
- Acquisition of STEM reference image
- Ultra -fast nanobeam precession electron diffraction scanned acquisition.
- Typical acquisition time: 5-10 mm (150x150)
- Time per pixel: 10-40 ms Analysis time 5-10 min.
- Automated local strain analysis via AppFive proprietary algorithm.
- Acquisition from individual positions, line profiles, areas Spatial resolution < 2 nm attainable (FED TEM)
APPLICATION NOTE
Design Materials with Specific Applications
Challeging Materials with Challenging Applications
Better Steel with Improved Properties
Steel Corrosion in Nuclear Plants
Metals Under Huge Stress
Pavements of the Nanoworld
Structure of Embedded Nanodomains
Nanoscale Reaction Models in Solid Oxide Fuel Cells
Inside the Structure of Dye-Sensitized Solar Cells
Understanding Li insertion for next generation batteries
From “Clean Energy” Cars to Structure of Metal Organics MOFs
Next generation circuits for semiconductor industry
Structure of magnetic semiconductors
Atomic scale of nanolayer composites
